Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F24%3A00135309" target="_blank" >RIV/00216224:14310/24:00135309 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.vacuum.2023.112881" target="_blank" >https://doi.org/10.1016/j.vacuum.2023.112881</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2023.112881" target="_blank" >10.1016/j.vacuum.2023.112881</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Popis výsledku v původním jazyce

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Název v anglickém jazyce

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Popis výsledku anglicky

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

1879-2715

Svazek periodika

221

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

1-14

Kód UT WoS článku

001138128000001

EID výsledku v databázi Scopus

2-s2.0-85179890961