Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F25%3A00140720" target="_blank" >RIV/00216224:14310/25:00140720 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.surfcoat.2025.131865" target="_blank" >https://doi.org/10.1016/j.surfcoat.2025.131865</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2025.131865" target="_blank" >10.1016/j.surfcoat.2025.131865</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Popis výsledku v původním jazyce

This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.

Název v anglickém jazyce

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Popis výsledku anglicky

This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/FW06010462" target="_blank" >FW06010462: Tenzometrické tenkovrstvé senzory s vysokou citlivostí a životností připravované pomocí magnetronové depozice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Coatings Technology

ISSN

0257-8972

e-ISSN

1879-3347

Svazek periodika

498

Číslo periodika v rámci svazku

February

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

12

Strana od-do

1-12

Kód UT WoS článku

001419678800001

EID výsledku v databázi Scopus

2-s2.0-85216462344