Thermoelectric Figure of Merit of Single Crystals p-(BixSb(1-x))2-ySnyTe3 in Wide Temperature Range

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895454" target="_blank" >RIV/00216275:25310/12:39895454 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Thermoelectric Figure of Merit of Single Crystals p-(BixSb(1-x))2-ySnyTe3 in Wide Temperature Range

Popis výsledku v původním jazyce

Here we report the influence of tin doping on the thermoelectric properties of p-(BixSb(1-x))2-ySnyTe3 single crystals (x = 0; 0,25; 0,5) in the temperature range 7 K - 300 K. Studies of the temperature dependence of Seebeck coefficient S, electrical conductivity, heat conductivity k and figure of merit of p-(BixSb(1-x))2-ySnyTe3 single crystals were carried out. In order to determine the concentration of light holes and the Fermi energy, we used the Shubnikov-de-Haas effect at T = 4.2 K. By increasingthe Sn content, the hole concentration increases in p-(BixSb(1-x))2-ySnyTe3. The thermal conductivity k of the p-(BixSb(1-x))2-ySnyTe3 crystals decreases due to Sn doping, while electrical resistivity increases in the temperature interval 150 K less T less 300 K and decreases at T less 150 K. The Seebeck coefficient S for all compositions is positive and decreases due to Sn doping in the whole temperature range. The main reason for this is an acceptor effect and increase of the hole conc

Název v anglickém jazyce

Thermoelectric Figure of Merit of Single Crystals p-(BixSb(1-x))2-ySnyTe3 in Wide Temperature Range

Popis výsledku anglicky

Here we report the influence of tin doping on the thermoelectric properties of p-(BixSb(1-x))2-ySnyTe3 single crystals (x = 0; 0,25; 0,5) in the temperature range 7 K - 300 K. Studies of the temperature dependence of Seebeck coefficient S, electrical conductivity, heat conductivity k and figure of merit of p-(BixSb(1-x))2-ySnyTe3 single crystals were carried out. In order to determine the concentration of light holes and the Fermi energy, we used the Shubnikov-de-Haas effect at T = 4.2 K. By increasingthe Sn content, the hole concentration increases in p-(BixSb(1-x))2-ySnyTe3. The thermal conductivity k of the p-(BixSb(1-x))2-ySnyTe3 crystals decreases due to Sn doping, while electrical resistivity increases in the temperature interval 150 K less T less 300 K and decreases at T less 150 K. The Seebeck coefficient S for all compositions is positive and decreases due to Sn doping in the whole temperature range. The main reason for this is an acceptor effect and increase of the hole conc

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Thermoelectricity

ISSN

1607-8829

e-ISSN

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Svazek periodika

1

Číslo periodika v rámci svazku

2012

Stát vydavatele periodika

UA - Ukrajina

Počet stran výsledku

6

Strana od-do

41-46

Kód UT WoS článku

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EID výsledku v databázi Scopus

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