Crystallization behavior of RF magnetron sputtered Ge2Sb2.3Te4Se thin films

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization behavior of RF magnetron sputtered Ge2Sb2.3Te4Se thin films

Popis výsledku v původním jazyce

Thin amorphous Ge-Sb-Te-Se films were deposited by RF (f = 13.56 MHz) magnetron sputtering of Ge2Sb2.3Te4Se target in argon plasma. Feasibility of prepared thin films for PC-RAM application was tested via four-point probe measurement of temperature dependence of sheet resistance known as Van der Pauw technique. As-deposited and thermally treated thin films were characterized by the same way. Composition, chemical homogeneity and surface morphology were studied by Energy Dispersive X-Ray analysis coupledwith Scanning Electron Microscopy (SEM-EDX) whilst crystallinity was determined by X-Ray diffraction (XRD). Moreover, optical properties of as-deposited thin films were determined due Variable Angle Spectroscopic Ellipsometry (VASE). Influence of deposition conditions or thermal treatment to composition, crystallinity and surface morphology were established. Profile of temperature dependence of sheet resistance and characteristic temperatures (e.g. crystallization temperature) were obta

Název v anglickém jazyce

Crystallization behavior of RF magnetron sputtered Ge2Sb2.3Te4Se thin films

Popis výsledku anglicky

Thin amorphous Ge-Sb-Te-Se films were deposited by RF (f = 13.56 MHz) magnetron sputtering of Ge2Sb2.3Te4Se target in argon plasma. Feasibility of prepared thin films for PC-RAM application was tested via four-point probe measurement of temperature dependence of sheet resistance known as Van der Pauw technique. As-deposited and thermally treated thin films were characterized by the same way. Composition, chemical homogeneity and surface morphology were studied by Energy Dispersive X-Ray analysis coupledwith Scanning Electron Microscopy (SEM-EDX) whilst crystallinity was determined by X-Ray diffraction (XRD). Moreover, optical properties of as-deposited thin films were determined due Variable Angle Spectroscopic Ellipsometry (VASE). Influence of deposition conditions or thermal treatment to composition, crystallinity and surface morphology were established. Profile of temperature dependence of sheet resistance and characteristic temperatures (e.g. crystallization temperature) were obta

Druh

O - Ostatní výsledky

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů