Laser desorption ionization time-of-flight mass spectrometry of glasses and amorphous films from Ge-As-Se system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901475" target="_blank" >RIV/00216275:25310/16:39901475 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1111/jace.14366" target="_blank" >http://dx.doi.org/10.1111/jace.14366</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/jace.14366" target="_blank" >10.1111/jace.14366</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Laser desorption ionization time-of-flight mass spectrometry of glasses and amorphous films from Ge-As-Se system

Popis výsledku v původním jazyce

Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters' stoichiometry. The clusters observed were Asb+ (b = 1-3), Se2- , binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3, c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2- , Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.

Název v anglickém jazyce

Laser desorption ionization time-of-flight mass spectrometry of glasses and amorphous films from Ge-As-Se system

Popis výsledku anglicky

Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters' stoichiometry. The clusters observed were Asb+ (b = 1-3), Se2- , binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3, c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2- , Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JH - Keramika, žáruvzdorné materiály a skla

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

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Svazek periodika

99

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

"3594?3599"

Kód UT WoS článku

000387208400016

EID výsledku v databázi Scopus

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