Surface patterning in Ge-Se amorphous layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39910651" target="_blank" >RIV/00216275:25310/17:39910651 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2016.12.035" target="_blank" >http://dx.doi.org/10.1016/j.jnoncrysol.2016.12.035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2016.12.035" target="_blank" >10.1016/j.jnoncrysol.2016.12.035</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface patterning in Ge-Se amorphous layers

Popis výsledku v původním jazyce

Compositional and fabrication method dependences of laser-induced geometrical surface relief formation in Ge-Se amorphous layers were investigated with the aim to determine the possible role of initial conditions in the mechanism and efficiency of optical recording. The results show that pulsed laser deposition has some advantages in composition preservation and surface relief formation in comparison with thermal evaporation for producing layers with high sensitivity and efficiency of surface relief grating formation, especially in layers with Ge24Se76 composition. It was shown that modulation depth of the created surface structures increases with increasing Se content in Ge-Se amorphous chalcogenide layers. Thermal annealing has essential influence on the recording parameters, enabling additional insight into the possible mechanisms of light induced surface patterning in this type of light-sensitive amorphous chalcogenides. Raman spectroscopy was used to identify local structure of produced surface patterns.

Název v anglickém jazyce

Surface patterning in Ge-Se amorphous layers

Popis výsledku anglicky

Compositional and fabrication method dependences of laser-induced geometrical surface relief formation in Ge-Se amorphous layers were investigated with the aim to determine the possible role of initial conditions in the mechanism and efficiency of optical recording. The results show that pulsed laser deposition has some advantages in composition preservation and surface relief formation in comparison with thermal evaporation for producing layers with high sensitivity and efficiency of surface relief grating formation, especially in layers with Ge24Se76 composition. It was shown that modulation depth of the created surface structures increases with increasing Se content in Ge-Se amorphous chalcogenide layers. Thermal annealing has essential influence on the recording parameters, enabling additional insight into the possible mechanisms of light induced surface patterning in this type of light-sensitive amorphous chalcogenides. Raman spectroscopy was used to identify local structure of produced surface patterns.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA15-02634S" target="_blank" >GA15-02634S: Amorfní chalkogenidové tenké vrstvy: fotoindukované jevy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Non-Crystalline Solids

ISSN

0022-3093

e-ISSN

—

Svazek periodika

459

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

51-56

Kód UT WoS článku

000395608200008

EID výsledku v databázi Scopus

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