Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39911161" target="_blank" >RIV/00216275:25310/17:39911161 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s10854-017-6383-y" target="_blank" >http://dx.doi.org/10.1007/s10854-017-6383-y</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-017-6383-y" target="_blank" >10.1007/s10854-017-6383-y</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

Popis výsledku v původním jazyce

Atom-probe tomography of Ag-photodoped amorphous thin-film Ge40S60, the material of interest in nano-ionic memory and lateral geometry MEMS technologies, reveals regions with two distinct compositions on a nanometer length-scale. One type of region is Ag-rich and of a size typically extending beyond the measured sample volume of similar to 40 x 40 x 80 nm(3). These type-I regions contain aligned nanocolumns, similar to 5 nm wide, that are the likely location for reversible diffusion of Ag+ ions and associated growth/dissolution of conducting filaments. The nanocolumns become relatively Ag-rich during the photodoping, and the pattern of Ag enrichment originates from the columnar-porous structure of the as-deposited film that is to some extent preserved in the electrolyte after photodoping. Type-II regions have lower Ag content, are typically 10-20 nm across, and appear to conform to the usual description of the photoreaction products of the optically-induced dissolution and diffusion of silver in a thin-film chalcogenide. The microstructure, with two types of region and aligned nanocolumns, is present in the electrolyte after photodoping without any applied bias, and is important for understanding switching mechanisms, and writing and erasing cycles, in programmable-metallization-cell memory.

Název v anglickém jazyce

Preferred location for conducting filament formation in thin-film nano-ionic electrolyte: study of microstructure by atom-probe tomography

Popis výsledku anglicky

Atom-probe tomography of Ag-photodoped amorphous thin-film Ge40S60, the material of interest in nano-ionic memory and lateral geometry MEMS technologies, reveals regions with two distinct compositions on a nanometer length-scale. One type of region is Ag-rich and of a size typically extending beyond the measured sample volume of similar to 40 x 40 x 80 nm(3). These type-I regions contain aligned nanocolumns, similar to 5 nm wide, that are the likely location for reversible diffusion of Ag+ ions and associated growth/dissolution of conducting filaments. The nanocolumns become relatively Ag-rich during the photodoping, and the pattern of Ag enrichment originates from the columnar-porous structure of the as-deposited film that is to some extent preserved in the electrolyte after photodoping. Type-II regions have lower Ag content, are typically 10-20 nm across, and appear to conform to the usual description of the photoreaction products of the optically-induced dissolution and diffusion of silver in a thin-film chalcogenide. The microstructure, with two types of region and aligned nanocolumns, is present in the electrolyte after photodoping without any applied bias, and is important for understanding switching mechanisms, and writing and erasing cycles, in programmable-metallization-cell memory.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/LH14059" target="_blank" >LH14059: Elektrochemické metalizační cely ? nanoúrovňové paměti v tenkých vrstvách amorfních chalkogenidů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

e-ISSN

—

Svazek periodika

28

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

6846-6851

Kód UT WoS článku

000399709300062

EID výsledku v databázi Scopus

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