Bixbyite-Ta2N2O film prepared by HiPIMS and postdeposition annealing: Structure and properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916445" target="_blank" >RIV/00216275:25310/20:39916445 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23520/20:43958594

Výsledek na webu

<a href="https://avs.scitation.org/doi/full/10.1116/6.0000066" target="_blank" >https://avs.scitation.org/doi/full/10.1116/6.0000066</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1116/6.0000066" target="_blank" >10.1116/6.0000066</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Bixbyite-Ta2N2O film prepared by HiPIMS and postdeposition annealing: Structure and properties

Popis výsledku v původním jazyce

High-power impulse magnetron sputtering of a Ta target in precisely controlled Ar +O 2 +N 2 gas mixtures was used to prepare amorphous N-rich tantalum oxynitride (Ta-O-N) films with a finely varied elemental composition. Postdeposition annealing of the films at 900 degrees C for 5 min in vacuum led to their crystallization without any significant change in the elemental composition. The authors show that this approach allows preparation of a Ta-O-N film with a dominant Ta 2N 2O phase of the bixbyite structure. As far as the authors know, this phase has been neither experimentally nor theoretically reported yet. The film exhibits semiconducting properties characterized by two electrical (indirect or selection-rule forbidden) bandgaps of about 0.2 and 1.0 eV and one optical (direct and selection-rule allowed) bandgap of 2.0 eV (suitable for visible-light absorption up to 620 nm). This observation is in good agreement with the carried out ab initio calculations and the experimental data obtained by soft and hard X-ray photoelectron spectroscopy. Furthermore, the optical bandgap is appropriately positioned with respect to the redox potentials for water splitting, which makes this material an interesting candidate for this application.

Název v anglickém jazyce

Bixbyite-Ta2N2O film prepared by HiPIMS and postdeposition annealing: Structure and properties

Popis výsledku anglicky

High-power impulse magnetron sputtering of a Ta target in precisely controlled Ar +O 2 +N 2 gas mixtures was used to prepare amorphous N-rich tantalum oxynitride (Ta-O-N) films with a finely varied elemental composition. Postdeposition annealing of the films at 900 degrees C for 5 min in vacuum led to their crystallization without any significant change in the elemental composition. The authors show that this approach allows preparation of a Ta-O-N film with a dominant Ta 2N 2O phase of the bixbyite structure. As far as the authors know, this phase has been neither experimentally nor theoretically reported yet. The film exhibits semiconducting properties characterized by two electrical (indirect or selection-rule forbidden) bandgaps of about 0.2 and 1.0 eV and one optical (direct and selection-rule allowed) bandgap of 2.0 eV (suitable for visible-light absorption up to 620 nm). This observation is in good agreement with the carried out ab initio calculations and the experimental data obtained by soft and hard X-ray photoelectron spectroscopy. Furthermore, the optical bandgap is appropriately positioned with respect to the redox potentials for water splitting, which makes this material an interesting candidate for this application.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Vacuum Science &amp; Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

ISSN

0734-2101

e-ISSN

—

Svazek periodika

38

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

"033409-1"-"033409-10"

Kód UT WoS článku

000529406300001

EID výsledku v databázi Scopus

2-s2.0-85084056413