METHOD OF FORMING A METALLIC CONDUCTIVE FILAMENT AND RANDOM ACCESS MEMORY DEVICE FOR CARRYING OUT THE METHOD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39917280" target="_blank" >RIV/00216275:25310/20:39917280 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

METHOD OF FORMING A METALLIC CONDUCTIVE FILAMENT AND RANDOM ACCESS MEMORY DEVICE FOR CARRYING OUT THE METHOD

Popis výsledku v původním jazyce

This task has been resolved by development of a method of forming a metallic conductive filament in an ECM based device according to present invention. The dissolution of active electrode often leads to the failure of device. Nevertheless, an ECM based RRAM device can be fabricated with both inert electrodes. An aspect of the invention creates a combination of cells in a single device, which makes possible for a single ECM based cell working with two inert electrodes. There are two methods of forming a metallic conductive filament in an ECM based device: Method 1: The ECM based device comprises an inert-inert electrode cell and an inert-active electrode cell. The inert-inert electrode cell and the inert-active electrode cell are connected in series in a serial connection. The inert-inert electrode cell comprises a bottom inert electrode which is connected with a negative electrode of a voltage source and the inert-active electrode cell comprises a top active electrode of which is connected with a positive electrode of the voltage source. Initially, the inert-active electrode cell in the ECM based device is preset to low resistance under a bias which is higher than the SET threshold bias in a separated circuit, in order to have thick filament. During the SET process of device, as the inert-active electrode cell has been in low resistance state, only the inert-inert electrode cell is switched from high resistant state to low resistant state at the SET threshold bias. The Ag ions in the electrolyte of the inert-inert electrode cell are reduced to Ag filament. Meanwhile, the Ag active electrode in inert-active electrode cell is oxidized into Ag ions and migrated into electrolyte of the inert-active electrode cell. And the filament in the inert-active electrode cell is thicker than that in the inert-inert electrode cell. Therefore, the filament in the inert-inert electrode cell dissolves other than that in the inert-active electrode cell, during RESET process. Although the resistance of the inert-active electrode cell in the device can be switched to high resistant state during RESET process, there is still Ag remaining in the electrolyte, which functions as Ag electrode. Therefore, the inert-active electrode cell with double inert electrodes can be switched individually in separated circuit, between high and low resistant states. Method 2: The ECM based device comprises an inert-inert electrode cell and an inert-active electrode cell. The inert-inert electrode cell and the inert-active electrode cell are connected in series in a serial connection. The inert-inert electrode cell comprises a bottom inert electrode which is connected with a negative electrode of a voltage source and the inert-active electrode cell comprises a top active electrode of which is connected with a positive electrode of the voltage source. Initially, the inert-active electrode cell in ECM based device is maintained as the original high resistance state. During the SET process of device, both of the inert-inert electrode cell and the inert-active electrode cell is switched to low resistance state. After SET operation of device, the inert-inert electrode cell has to be reset to high resistive state individually in separated circuit. Then it can be switched between high and low resistance states continuously in the separated circuit. In this contest, in an embodiment of the present invention, there is provided a random access memory device for carrying out the above-mentioned methods, wherein the random access memory device is an ECM based device comprising: Inert-inert electrode cell, wherein the bottom inert electrode of inert-inert electrode is in contact with the negative polarity of voltage source. Inert-active electrode cell, where the bottom inert electrode of inert-active electrode cell is in contact with the top inert electrode of inert-inert electrode cell, where the top active electrode of inert-active electrode cell is in contact with the positive polarity of voltage source; Inert-inert electrode cell comprising: top inert electrode, electrolyte and bottom inert electrode, where the inert electrodes can be made of conductive oxides, conductive nitrides, or metals and its combinations except for Ag and Cu; the Ag or Cu doped electrolyte can be Ag or Cu doped oxides or chalcogenides thin film. Inert-active cell comprising: inert top electrode, electrolyte and active bottom electrode, where the inert electrodes can be made of conductive oxides, conductive nitrides, or metals and its combinations except for Ag and Cu; the active electrodes can be made of Ag or Cu element; the Ag or Cu doped electrolyte can be Ag or Cu doped oxides or chalcogenides thin film.

Název v anglickém jazyce

METHOD OF FORMING A METALLIC CONDUCTIVE FILAMENT AND RANDOM ACCESS MEMORY DEVICE FOR CARRYING OUT THE METHOD

Popis výsledku anglicky

This task has been resolved by development of a method of forming a metallic conductive filament in an ECM based device according to present invention. The dissolution of active electrode often leads to the failure of device. Nevertheless, an ECM based RRAM device can be fabricated with both inert electrodes. An aspect of the invention creates a combination of cells in a single device, which makes possible for a single ECM based cell working with two inert electrodes. There are two methods of forming a metallic conductive filament in an ECM based device: Method 1: The ECM based device comprises an inert-inert electrode cell and an inert-active electrode cell. The inert-inert electrode cell and the inert-active electrode cell are connected in series in a serial connection. The inert-inert electrode cell comprises a bottom inert electrode which is connected with a negative electrode of a voltage source and the inert-active electrode cell comprises a top active electrode of which is connected with a positive electrode of the voltage source. Initially, the inert-active electrode cell in the ECM based device is preset to low resistance under a bias which is higher than the SET threshold bias in a separated circuit, in order to have thick filament. During the SET process of device, as the inert-active electrode cell has been in low resistance state, only the inert-inert electrode cell is switched from high resistant state to low resistant state at the SET threshold bias. The Ag ions in the electrolyte of the inert-inert electrode cell are reduced to Ag filament. Meanwhile, the Ag active electrode in inert-active electrode cell is oxidized into Ag ions and migrated into electrolyte of the inert-active electrode cell. And the filament in the inert-active electrode cell is thicker than that in the inert-inert electrode cell. Therefore, the filament in the inert-inert electrode cell dissolves other than that in the inert-active electrode cell, during RESET process. Although the resistance of the inert-active electrode cell in the device can be switched to high resistant state during RESET process, there is still Ag remaining in the electrolyte, which functions as Ag electrode. Therefore, the inert-active electrode cell with double inert electrodes can be switched individually in separated circuit, between high and low resistant states. Method 2: The ECM based device comprises an inert-inert electrode cell and an inert-active electrode cell. The inert-inert electrode cell and the inert-active electrode cell are connected in series in a serial connection. The inert-inert electrode cell comprises a bottom inert electrode which is connected with a negative electrode of a voltage source and the inert-active electrode cell comprises a top active electrode of which is connected with a positive electrode of the voltage source. Initially, the inert-active electrode cell in ECM based device is maintained as the original high resistance state. During the SET process of device, both of the inert-inert electrode cell and the inert-active electrode cell is switched to low resistance state. After SET operation of device, the inert-inert electrode cell has to be reset to high resistive state individually in separated circuit. Then it can be switched between high and low resistance states continuously in the separated circuit. In this contest, in an embodiment of the present invention, there is provided a random access memory device for carrying out the above-mentioned methods, wherein the random access memory device is an ECM based device comprising: Inert-inert electrode cell, wherein the bottom inert electrode of inert-inert electrode is in contact with the negative polarity of voltage source. Inert-active electrode cell, where the bottom inert electrode of inert-active electrode cell is in contact with the top inert electrode of inert-inert electrode cell, where the top active electrode of inert-active electrode cell is in contact with the positive polarity of voltage source; Inert-inert electrode cell comprising: top inert electrode, electrolyte and bottom inert electrode, where the inert electrodes can be made of conductive oxides, conductive nitrides, or metals and its combinations except for Ag and Cu; the Ag or Cu doped electrolyte can be Ag or Cu doped oxides or chalcogenides thin film. Inert-active cell comprising: inert top electrode, electrolyte and active bottom electrode, where the inert electrodes can be made of conductive oxides, conductive nitrides, or metals and its combinations except for Ag and Cu; the active electrodes can be made of Ag or Cu element; the Ag or Cu doped electrolyte can be Ag or Cu doped oxides or chalcogenides thin film.

Druh

P - Patent

CEP obor

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OECD FORD obor

20506 - Coating and films

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Číslo patentu nebo vzoru

US010879460B2

Vydavatel

US001 -

Název vydavatele

United States Patent and Trademark Office (USPTO)

Místo vydání

Alexandria

Stát vydání

US - Spojené státy americké

Datum přijetí

29. 12. 2020

Název vlastníka

Univerzita Pardubice, Pardubice (CZ)

Způsob využití

A - Výsledek využívá pouze poskytovatel

Druh možnosti využití

A - K využití výsledku jiným subjektem je vždy nutné nabytí licence