In-situ UV degradace PMPSi studovaná spektroskopickou elipsometrií, XPS a TDS

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS

Popis výsledku v původním jazyce

PMPSi (poly(methyl-phenylsilane)) films were deposited by the spin-coating method on single crystal silicon substrates from toluene solution. Their thickness was about 200 nm. We have studied the stability of these films, which is crucial for their technological applications [1,2], by in-situ spectroscopic ellipsometry (SE) and X-ray Photoelectron Spectroscopy (XPS). This has been proved as a proper combination of monitoring methods as XPS gives direct insight into compositional and structural changes oof the polymer (5-10 nm below the surface) and the SE technique is very sensitive to the changes in PMPSi films. We have used rotating analyzer ellipsometry in the energy interval 3.4 - 4.8 eV to cover the onset of absorption starting with the lowest excitonic band involving electronic stays localized on Si. The ellipsometer is mounted on an UHV chamber, the angles of incident light can be adjusted to 45 or 67.5 . Our recent study [3] indicates that the Si-Si bonds in the polymer main ch

Název v anglickém jazyce

UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS

Popis výsledku anglicky

PMPSi (poly(methyl-phenylsilane)) films were deposited by the spin-coating method on single crystal silicon substrates from toluene solution. Their thickness was about 200 nm. We have studied the stability of these films, which is crucial for their technological applications [1,2], by in-situ spectroscopic ellipsometry (SE) and X-ray Photoelectron Spectroscopy (XPS). This has been proved as a proper combination of monitoring methods as XPS gives direct insight into compositional and structural changes oof the polymer (5-10 nm below the surface) and the SE technique is very sensitive to the changes in PMPSi films. We have used rotating analyzer ellipsometry in the energy interval 3.4 - 4.8 eV to cover the onset of absorption starting with the lowest excitonic band involving electronic stays localized on Si. The ellipsometer is mounted on an UHV chamber, the angles of incident light can be adjusted to 45 or 67.5 . Our recent study [3] indicates that the Si-Si bonds in the polymer main ch

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Místo vydání

Vienna

Název nakladatele resp. objednatele

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Verze

1

Identifikační číslo nosiče

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