In situ analýza ultratenkých vrstev Ga pomocí ToF LEIS

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

In situ Analysis of Ga-ultra Thin Films by TOF-LEIS

Popis výsledku v původním jazyce

It is very well known that low energy ion scattering (LEIS) is a surface analytical technique capable of sensing the outermost monolayer on the surface. When a time-of-flight (TOF) detection is used, both scattered ions and neutral particles are detectedand, hence, an information on deeper layers can be obtained as well. The TOF LEIS can thus be used for analysis of ultra thin films and for in-situ monitoring of their growth. In our group a unique ultrahigh vacuum (UHV) apparatus for deposition and in situ analysis of ultrathin films has been developed. Our recently published results on Ga grown on hydrogen terminated Si (111) proved the ability of TOF-LEIS to in-situ monitor the growth mechanism of ultra thin films as well as their thickness. Howeve r, Ga-film behaviour is complicated, it tends to form liquid metal droplets on silicon surfaces. To interpret the TOF-LEIS spectra correctly and to get a realistic view into the growth, computer simulation of ion beam scattering has to be

Název v anglickém jazyce

In situ Analysis of Ga-ultra Thin Films by TOF-LEIS

Popis výsledku anglicky

It is very well known that low energy ion scattering (LEIS) is a surface analytical technique capable of sensing the outermost monolayer on the surface. When a time-of-flight (TOF) detection is used, both scattered ions and neutral particles are detectedand, hence, an information on deeper layers can be obtained as well. The TOF LEIS can thus be used for analysis of ultra thin films and for in-situ monitoring of their growth. In our group a unique ultrahigh vacuum (UHV) apparatus for deposition and in situ analysis of ultrathin films has been developed. Our recently published results on Ga grown on hydrogen terminated Si (111) proved the ability of TOF-LEIS to in-situ monitor the growth mechanism of ultra thin films as well as their thickness. Howeve r, Ga-film behaviour is complicated, it tends to form liquid metal droplets on silicon surfaces. To interpret the TOF-LEIS spectra correctly and to get a realistic view into the growth, computer simulation of ion beam scattering has to be

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Místo vydání

Seville

Název nakladatele resp. objednatele

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Verze

1

Identifikační číslo nosiče

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