Aplikace ToF LEIS k monitorování růstu a působení teploty na ultratenké vrstvy Ga.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54247" target="_blank" >RIV/00216305:26210/05:PU54247 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films

Popis výsledku v původním jazyce

In the presentation the ability of TOF-LEIS to monitor the growth and thermal treatment of ultra thin films of Ga on Si (111) and Si (100) substrates will be shown. The growth was carried out both at room and enhanced temperatures. As Ga tends to form droplets on these surfaces, the interpretation of TOF-LEIS spectra is not straightforward. The layer thickness of these films can be monitored by the FWHM of Ga peaks. Although in case of low energy ions the ion-surface interactions are more complicated thhan in RBS or MEIS regime (multiple scattering), FWHM dependence on the Ga coverage showed linear behaviour in a range of a few MLs (up to 9 ML for Si (111)) . An useful indicator of the growth mode was the fastness of a Si-peak intensity drop with a Gacoverage. The choice of a substrate treatment was vital for the growth mode of thin Ga layers . To interpret the experimental data and prove these results, complementary analytical methods as AFM, TDS, SR-PES and a computer simulation cod

Název v anglickém jazyce

Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films

Popis výsledku anglicky

In the presentation the ability of TOF-LEIS to monitor the growth and thermal treatment of ultra thin films of Ga on Si (111) and Si (100) substrates will be shown. The growth was carried out both at room and enhanced temperatures. As Ga tends to form droplets on these surfaces, the interpretation of TOF-LEIS spectra is not straightforward. The layer thickness of these films can be monitored by the FWHM of Ga peaks. Although in case of low energy ions the ion-surface interactions are more complicated thhan in RBS or MEIS regime (multiple scattering), FWHM dependence on the Ga coverage showed linear behaviour in a range of a few MLs (up to 9 ML for Si (111)) . An useful indicator of the growth mode was the fastness of a Si-peak intensity drop with a Gacoverage. The choice of a substrate treatment was vital for the growth mode of thin Ga layers . To interpret the experimental data and prove these results, complementary analytical methods as AFM, TDS, SR-PES and a computer simulation cod

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Místo vydání

Vienna

Název nakladatele resp. objednatele

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Verze

1

Identifikační číslo nosiče

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