Resolution Limits of Low Voltage BSE Imaging in Scanning Electron Microscopy Resolution Limints of Low Voltage BSE Imaging in Scanning Electron Microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F15%3APU114229" target="_blank" >RIV/00216305:26210/15:PU114229 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Resolution Limits of Low Voltage BSE Imaging in Scanning Electron Microscopy Resolution Limints of Low Voltage BSE Imaging in Scanning Electron Microscopy

Popis výsledku v původním jazyce

Scanning electron microscopy is an important part of material sciences and brings new perspectives into study of materials. Modern material engineering follows tend to develop materials in nanoscale. There can arise many problems with analysis and even electron microscopy can reach its borders. Conventional access allows to analyse parts of the materials with size of about few microns or hundreds of nanometres. This restriction is caused by construction of detectors which requires electrons with relatively high energy. As an example can be mentioned four-quadrant silicon detector of back scattered electrons (AsB). This detector is able to detect electrons with energies in range 5-30 keV (ideally 10-20 keV). Interaction volume and penetration depth of electrons with a high landing energy is about 1-2 micrometers. Therefore, there is limitation in the size of the observed parts of the materials. This problem can be reduced using electron microscopy at low landing energy (0.1-3 keV). Inte

Název v anglickém jazyce

Resolution Limits of Low Voltage BSE Imaging in Scanning Electron Microscopy Resolution Limints of Low Voltage BSE Imaging in Scanning Electron Microscopy

Popis výsledku anglicky

Scanning electron microscopy is an important part of material sciences and brings new perspectives into study of materials. Modern material engineering follows tend to develop materials in nanoscale. There can arise many problems with analysis and even electron microscopy can reach its borders. Conventional access allows to analyse parts of the materials with size of about few microns or hundreds of nanometres. This restriction is caused by construction of detectors which requires electrons with relatively high energy. As an example can be mentioned four-quadrant silicon detector of back scattered electrons (AsB). This detector is able to detect electrons with energies in range 5-30 keV (ideally 10-20 keV). Interaction volume and penetration depth of electrons with a high landing energy is about 1-2 micrometers. Therefore, there is limitation in the size of the observed parts of the materials. This problem can be reduced using electron microscopy at low landing energy (0.1-3 keV). Inte

Druh

D - Stať ve sborníku

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

<a href="/cs/project/LO1202" target="_blank" >LO1202: NETME CENTRE PLUS</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

MULTI-SCALE DESIGN OF ADVANCED MATERIALS CONFERENCE PROCEEDINGS

ISBN

978-80-214-5146-9

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

30-35

Název nakladatele

Brno University of Technology

Místo vydání

Brno

Místo konání akce

Velké Bílovice

Datum konání akce

28. 5. 2015

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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