Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F24%3APU155960" target="_blank" >RIV/00216305:26210/24:PU155960 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.mdpi.com/2079-9292/13/15/2945" target="_blank" >https://www.mdpi.com/2079-9292/13/15/2945</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/electronics13152945" target="_blank" >10.3390/electronics13152945</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

Popis výsledku v původním jazyce

The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photonics. However, material mismatches, including thermal expansion mismatch and polar/non-polar interfaces, cause defects such as stacking faults, microtwins, and anti-phase domains in GaP, adversely affecting its electronic properties. Our paper presents a structural and defect analysis using scanning transmission electron microscopy, high-resolution transmission electron microscopy, and scanning nanobeam electron diffraction of epitaxial GaP islands grown on Si nanotips embedded in SiO2. The Si nanotips were fabricated on 200 mm n-type Si (001) wafers using a CMOS-compatible pilot line, and GaP islands were grown selectively on the tips via gas-source molecular-beam epitaxy. Two sets of samples were investigated: GaP islands nucleated on open Si nanotips and islands nucleated within self-organized nanocavities on top of the nanotips. Our results reveal that in both cases, the GaP islands align with the Si lattice without dislocations due to lattice mismatch. Defects in GaP islands are limited to microtwins and stacking faults. When GaP nucleates in the nanocavities, most defects are trapped, resulting in defect-free GaP islands. Our findings demonstrate an effective approach to mitigate defects in epitaxial GaP on Si nanotip wafers fabricated by CMOS-compatible processes.

Název v anglickém jazyce

Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

Popis výsledku anglicky

The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photonics. However, material mismatches, including thermal expansion mismatch and polar/non-polar interfaces, cause defects such as stacking faults, microtwins, and anti-phase domains in GaP, adversely affecting its electronic properties. Our paper presents a structural and defect analysis using scanning transmission electron microscopy, high-resolution transmission electron microscopy, and scanning nanobeam electron diffraction of epitaxial GaP islands grown on Si nanotips embedded in SiO2. The Si nanotips were fabricated on 200 mm n-type Si (001) wafers using a CMOS-compatible pilot line, and GaP islands were grown selectively on the tips via gas-source molecular-beam epitaxy. Two sets of samples were investigated: GaP islands nucleated on open Si nanotips and islands nucleated within self-organized nanocavities on top of the nanotips. Our results reveal that in both cases, the GaP islands align with the Si lattice without dislocations due to lattice mismatch. Defects in GaP islands are limited to microtwins and stacking faults. When GaP nucleates in the nanocavities, most defects are trapped, resulting in defect-free GaP islands. Our findings demonstrate an effective approach to mitigate defects in epitaxial GaP on Si nanotip wafers fabricated by CMOS-compatible processes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Electronics (MDPI)

ISSN

2079-9292

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

„“-„“

Kód UT WoS článku

001286980800001

EID výsledku v databázi Scopus

2-s2.0-85200884358