NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30722" target="_blank" >RIV/00216305:26220/02:PU30722 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Popis výsledku v původním jazyce

The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamentall 1/f noise, and excess 1/fa noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.

Název v anglickém jazyce

NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Popis výsledku anglicky

The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamentall 1/f noise, and excess 1/fa noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20244" target="_blank" >ME 244: Stanovení kvality a spolehlivosti tlustovrstvových rezistorů cumovou spektroskopií</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of European Microelectronics packaging & interconection Symposium

ISBN

83-904462-8-6

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

320-323

Název nakladatele

IMAPS - Poland Chapter

Místo vydání

Krakow, Poland

Místo konání akce

Cracow

Datum konání akce

16. 6. 2002

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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