Conductivity mechanisms, breakdown and noise characteristics of niobium oxide capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39196" target="_blank" >RIV/00216305:26220/03:PU39196 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Conductivity mechanisms, breakdown and noise characteristics of niobium oxide capacitors

Popis výsledku v původním jazyce

Niobium Oxide capacitor, known as OxiCap, has already found its place in the market as a cheap and reliable non-burning component. The study of conductivity mechanisms has been done to prove its excellent stability, reliability and non-burning performance. Set of electrical measurements as VA characteristics in forward and reverse mode, frequency characteristics of capacitance, temperature or time dependency of basic parameters together with measurements of basic physical parameters enabled to propose tthe theoretical model of NbO - Nb2O5 - MnO2 system. OxiCap shows identical conductivity mechanism as tantalum capacitor, but furthermore a unique mechanism appears after dielectric breakdown. It causes a high resistance failure mode of NbO capacitor andlimits the current bellow the capacitor's thermal runaway point, which prevents capacitor's burning, whereas filtering characteristics remain unchanged. The paper compares the charge carrier transport mechanism and noise of Niobium Oxide

Název v anglickém jazyce

Conductivity mechanisms, breakdown and noise characteristics of niobium oxide capacitors

Popis výsledku anglicky

Niobium Oxide capacitor, known as OxiCap, has already found its place in the market as a cheap and reliable non-burning component. The study of conductivity mechanisms has been done to prove its excellent stability, reliability and non-burning performance. Set of electrical measurements as VA characteristics in forward and reverse mode, frequency characteristics of capacitance, temperature or time dependency of basic parameters together with measurements of basic physical parameters enabled to propose tthe theoretical model of NbO - Nb2O5 - MnO2 system. OxiCap shows identical conductivity mechanism as tantalum capacitor, but furthermore a unique mechanism appears after dielectric breakdown. It causes a high resistance failure mode of NbO capacitor andlimits the current bellow the capacitor's thermal runaway point, which prevents capacitor's burning, whereas filtering characteristics remain unchanged. The paper compares the charge carrier transport mechanism and noise of Niobium Oxide

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

CARTS - EUROPE 2003 Proceedings

ISBN

0887-7491

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

281-285

Název nakladatele

Electronic Components Institute Internationale Ltd.

Místo vydání

United Kingdom

Místo konání akce

Stuttgart

Datum konání akce

27. 10. 2003

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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