Breakdown characteristics and low frequency noise of niobium based capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU40393" target="_blank" >RIV/00216305:26220/03:PU40393 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Breakdown characteristics and low frequency noise of niobium based capacitors

Popis výsledku v původním jazyce

New capacitor technologies based on Niobium (Nb)and Niobium Oxide (NbO) powders in conjunction with niobium pentoxide (Nb2O5) dielectric have been released recently. These technologies are based on processes nearly identical to those of conventional tantalum (Ta) capacitors. One of the key features of the NbO, in contrast to Nb and Ta, is its' high resistance to ignition. This is due to the intrinsically higher ignition energy of NbO material and higher resistance failure mode after dielectric breakdownn. This paper describes the behaviour of NbO capacitors after forced dielectric breakdown with both forward and reverse voltages applied. A low frequency analysis of the charge carrier transport mechanism has been performed on the Nb/NbO - Nb2O5 - MnO2 systems and the mechanisms governing current flow and noise sources have been determined. The ideal metal / insulator / semiconductor (MIS) structure is shown in Fig.1. This paper also reviews the basic features of these capacitor technolo

Název v anglickém jazyce

Breakdown characteristics and low frequency noise of niobium based capacitors

Popis výsledku anglicky

New capacitor technologies based on Niobium (Nb)and Niobium Oxide (NbO) powders in conjunction with niobium pentoxide (Nb2O5) dielectric have been released recently. These technologies are based on processes nearly identical to those of conventional tantalum (Ta) capacitors. One of the key features of the NbO, in contrast to Nb and Ta, is its' high resistance to ignition. This is due to the intrinsically higher ignition energy of NbO material and higher resistance failure mode after dielectric breakdownn. This paper describes the behaviour of NbO capacitors after forced dielectric breakdown with both forward and reverse voltages applied. A low frequency analysis of the charge carrier transport mechanism has been performed on the Nb/NbO - Nb2O5 - MnO2 systems and the mechanisms governing current flow and noise sources have been determined. The ideal metal / insulator / semiconductor (MIS) structure is shown in Fig.1. This paper also reviews the basic features of these capacitor technolo

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Capacitor and Resistor Technology

ISSN

0887-7491

e-ISSN

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Svazek periodika

2003

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

53-59

Kód UT WoS článku

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EID výsledku v databázi Scopus

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