Mechanismy vodivosti a breakdown u NbO kondenzátorů

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU47292" target="_blank" >RIV/00216305:26220/04:PU47292 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Conductivity mechanisms and breakdown of NbO capacitors

Popis výsledku v původním jazyce

Niobium Oxide (NbO) capacitor, has already found its place in the market as a cost effective and reliable non-burning component. The study of conductivity mechanisms has been done to prove its good stability, reliability and non-burning performance. Setof electrical measurements as VA characteristics in forward and reverse mode, voltage and frequency characteristics of capacitance, temperature or time dependence of basic parameters together with measurements of basic physical parameters enabled to proppose the theoretical model of NbO - Nb2O5 - MnO2 system. A physical model of a solid niobium oxide capacitor based on metal-insulator-semiconductor (MIS) structure is given. The MIS structure consists from metallic niobium oxide, insulating layer made from Nb2O5 and semiconductor - MnO2. The current transport in normal and reverse mode is determined by work function of niobium oxide, Nb2O5, MnO2 and band bending in interface between Nb2O5 and MnO2. The work function difference between nio

Název v anglickém jazyce

Conductivity mechanisms and breakdown of NbO capacitors

Popis výsledku anglicky

Niobium Oxide (NbO) capacitor, has already found its place in the market as a cost effective and reliable non-burning component. The study of conductivity mechanisms has been done to prove its good stability, reliability and non-burning performance. Setof electrical measurements as VA characteristics in forward and reverse mode, voltage and frequency characteristics of capacitance, temperature or time dependence of basic parameters together with measurements of basic physical parameters enabled to proppose the theoretical model of NbO - Nb2O5 - MnO2 system. A physical model of a solid niobium oxide capacitor based on metal-insulator-semiconductor (MIS) structure is given. The MIS structure consists from metallic niobium oxide, insulating layer made from Nb2O5 and semiconductor - MnO2. The current transport in normal and reverse mode is determined by work function of niobium oxide, Nb2O5, MnO2 and band bending in interface between Nb2O5 and MnO2. The work function difference between nio

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Capacitor and Resistor Technology

ISSN

0887-7491

e-ISSN

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Svazek periodika

2004

Číslo periodika v rámci svazku

24

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

141-146

Kód UT WoS článku

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EID výsledku v databázi Scopus

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