Analýza difuze stříbra do tlustovrstvových odporů

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU44703" target="_blank" >RIV/00216305:26220/04:PU44703 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of silver diffusion into thick film resistor layers

Popis výsledku v původním jazyce

A silver diffusion and migration from contact electrode into thick film resistive layer and its influence on resistor characteristics was analysed. Strong dependence of non-linearity and noise on the contact electrode material was observed. Thick film resistors with AgPd contact electrode have higher value of third harmonic voltage, but show better long term stability and reliability comparing with resistors with Ag contact electrode. Silver diffusion results to the resistive layer conductivity increasee not only in the vicinity of contact, but in the thick film resistor also. This leads to the lowering of the electric field intensity near the contact and effective shortening of thick film resistor length. The scanning electron microscopy, noise spectroscopy and third harmonic measurements were used to investigate this effect. Numerical model was performed to estimate the influence of silver diffusion and migration on resistance changes due to firing and ageing. The model shows that th

Název v anglickém jazyce

Analysis of silver diffusion into thick film resistor layers

Popis výsledku anglicky

A silver diffusion and migration from contact electrode into thick film resistive layer and its influence on resistor characteristics was analysed. Strong dependence of non-linearity and noise on the contact electrode material was observed. Thick film resistors with AgPd contact electrode have higher value of third harmonic voltage, but show better long term stability and reliability comparing with resistors with Ag contact electrode. Silver diffusion results to the resistive layer conductivity increasee not only in the vicinity of contact, but in the thick film resistor also. This leads to the lowering of the electric field intensity near the contact and effective shortening of thick film resistor length. The scanning electron microscopy, noise spectroscopy and third harmonic measurements were used to investigate this effect. Numerical model was performed to estimate the influence of silver diffusion and migration on resistance changes due to firing and ageing. The model shows that th

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

<a href="/cs/project/ME%20605" target="_blank" >ME 605: Šum HEMT pro globální komunikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of 3rd European Microelectronics and Packaging Symposium with Table-Top Exhibition

ISBN

80-239-2835-X

ISSN

—

e-ISSN

—

Počet stran výsledku

665

Strana od-do

660-1324

Název nakladatele

IMAPS CZ&SK Chapter

Místo vydání

Lanskroun

Místo konání akce

Prague

Datum konání akce

16. 6. 2004

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—