Vyhodnocení kvality materiálu a odporu mezi vrstvami u tlustovrtvových resistorů na bázi polymerů

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63784" target="_blank" >RIV/00216305:26220/06:PU63784 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Polymer Based Thick Films - Material Quality and Interface Resistance Evaluation

Popis výsledku v původním jazyce

Abstract:We have studied the properties of polymer based thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance Rc created between dipping silver (DiAg) contact layer and resistive layer was determined from the surface potential distribution measurements and its value was less than1% of total sample resistance. The temperature dependence of conductivity was measured in the temperature range 110 to 310 K. VA characteristic is linear in both electric field orientations. At the temperature 308 K the VA characteristic is very near tothat on 110 K, but the resistivity temperature coefficient has opposite sign. Minimum resistance value is at temperature 230 K. For increasing temperature the sample resistance increases with temperature: R ~Ta, where a = 0.5 to 1.5. For

Název v anglickém jazyce

Polymer Based Thick Films - Material Quality and Interface Resistance Evaluation

Popis výsledku anglicky

Abstract:We have studied the properties of polymer based thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance Rc created between dipping silver (DiAg) contact layer and resistive layer was determined from the surface potential distribution measurements and its value was less than1% of total sample resistance. The temperature dependence of conductivity was measured in the temperature range 110 to 310 K. VA characteristic is linear in both electric field orientations. At the temperature 308 K the VA characteristic is very near tothat on 110 K, but the resistivity temperature coefficient has opposite sign. Minimum resistance value is at temperature 230 K. For increasing temperature the sample resistance increases with temperature: R ~Ta, where a = 0.5 to 1.5. For

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

XXX International Conference of IMAPS Poland Chapter Proceedings

ISBN

83-917701-3-3

ISSN

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e-ISSN

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Počet stran výsledku

8

Strana od-do

95-102

Název nakladatele

Institute of Electron Technology - Cracow Division

Místo vydání

Krakow, Poland

Místo konání akce

Krakow

Datum konání akce

24. 9. 2006

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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