Interface Resistance between Polymer Based Conducting and Resistive Layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81660" target="_blank" >RIV/00216305:26220/09:PU81660 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Interface Resistance between Polymer Based Conducting and Resistive Layers

Popis výsledku v původním jazyce

We have studied the interface resistance between the polymer based conducting and resistive thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance RI created between the contact layer made from dipping silver (DiAg) and resistive layer was determined from the surface potential distribution measurements and its value was less than 1% of total sample resistance. Measuring apparatus DISPOT designed in our laboratory provides the measuring of a surface potential distribution. The measuring probe is sliding on the surface of measured structure and potential change between the successive steps is normalized by the total current flowing through the structure. Elementary step (the shortest distance between two measurements) is 1.25 m. The equipment is arranged for current

Název v anglickém jazyce

Interface Resistance between Polymer Based Conducting and Resistive Layers

Popis výsledku anglicky

We have studied the interface resistance between the polymer based conducting and resistive thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance RI created between the contact layer made from dipping silver (DiAg) and resistive layer was determined from the surface potential distribution measurements and its value was less than 1% of total sample resistance. Measuring apparatus DISPOT designed in our laboratory provides the measuring of a surface potential distribution. The measuring probe is sliding on the surface of measured structure and potential change between the successive steps is normalized by the total current flowing through the structure. Elementary step (the shortest distance between two measurements) is 1.25 m. The equipment is arranged for current

Druh

D - Stať ve sborníku

CEP obor

BE - Teoretická fyzika

OECD FORD obor

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Projekt

<a href="/cs/project/GD102%2F09%2FH074" target="_blank" >GD102/09/H074: Diagnostika defektů v materiálech za použití nejnovějších defektoskopických metod</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

17th European Microelectronics and Packaging Conference & Exhibition

ISBN

978-1-4244-4722-0

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Neuveden

Místo vydání

Italie

Místo konání akce

Rimini

Datum konání akce

15. 6. 2009

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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