Niobium Oxide and Tantalum Capacitors: Quantum Effects in Charge Carrier Transport

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63879" target="_blank" >RIV/00216305:26220/06:PU63879 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

čeština

Název v původním jazyce

Niobium Oxide and Tantalum Capacitors: Quantum Effects in Charge Carrier Transport

Popis výsledku v původním jazyce

The aim of this paper is to characterize the physical processes responsible for a quality of NbO and Ta capacitors. This method for assessment of defects in active region of NbO and Ta capacitors is based on evaluation of VA and noise characteristics andtheirs temperature dependences. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer in these components has 30 to 100 nmand then they belong to nanoscale electronic devices in which quantum effects play important role. The concentration of localized energy states in insulating layer Nd = 1018 to 1019 cm-3. For such doping concentration the impurity band is created with &#61508;Eimp = 10 to 20 meV. To explain the ohmic current component electrons must be considered as waves with wavelength of the order of 1 nm. The conduction can occur by thermally activated hopping in impurity band and tunneling between d

Název v anglickém jazyce

Niob-oxidové a tantalové kondenzátory - kvantové efekty v transportu náboje

Popis výsledku anglicky

The aim of this paper is to characterize the physical processes responsible for a quality of NbO and Ta capacitors. This method for assessment of defects in active region of NbO and Ta capacitors is based on evaluation of VA and noise characteristics andtheirs temperature dependences. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer in these components has 30 to 100 nmand then they belong to nanoscale electronic devices in which quantum effects play important role. The concentration of localized energy states in insulating layer Nd = 1018 to 1019 cm-3. For such doping concentration the impurity band is created with &#61508;Eimp = 10 to 20 meV. To explain the ohmic current component electrons must be considered as waves with wavelength of the order of 1 nm. The conduction can occur by thermally activated hopping in impurity band and tunneling between d

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Zdroje šumu v polovodičových materiálech a součástkách</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings CARTS USA 2006 - The 26th Symposium for Passive Components

ISBN

0-7908-0108-6

ISSN

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e-ISSN

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Počet stran výsledku

7

Strana od-do

421-427

Název nakladatele

Electronic Components, Assemblies and Materials Association

Místo vydání

Orlando, Florida

Místo konání akce

Orlando, Florida

Datum konání akce

3. 4. 2006

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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