Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78582" target="_blank" >RIV/00216305:26220/08:PU78582 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Popis výsledku v původním jazyce

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interfaceirregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current d

Název v anglickém jazyce

Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Popis výsledku anglicky

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interfaceirregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current d

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

<a href="/cs/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Nízkofrekvenční šum v submikronových MOSFET a HEMT strukturách</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

CARTS USA 2008

ISBN

0-7908-0118-3

ISSN

—

e-ISSN

—

Počet stran výsledku

12

Strana od-do

—

Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Newport Beach, CA USA

Datum konání akce

17. 3. 2008

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—