Leakage Current and Noise of High Voltage NbO and Ta Capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78579" target="_blank" >RIV/00216305:26220/08:PU78579 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Leakage Current and Noise of High Voltage NbO and Ta Capacitors

Popis výsledku v původním jazyce

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. VA characteristics, leakage current noise and restoring voltage in normal and reverse mode at room and elevated temperature have been used to reveal the non stability sources. We have analyzed the effect of localized energy states in insulating layer on the leakage current and electric charge distribution. The electrical conduction can occur by thermally activatedhopping and tunneling between deep impurity states. When an electron moves from one localized state to another it will exchange energy with a phonons. The charge carrier's mobility has a thermally activated nature and its value is of the order of 1 cm2/Vs. Capacitor restoring voltage analysis reveals that in normal mode charge stored in insulating layer is proportional to applied voltage. Proportionality constant depends on insulating layer characteristics and on anodic oxidation paramet

Název v anglickém jazyce

Leakage Current and Noise of High Voltage NbO and Ta Capacitors

Popis výsledku anglicky

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. VA characteristics, leakage current noise and restoring voltage in normal and reverse mode at room and elevated temperature have been used to reveal the non stability sources. We have analyzed the effect of localized energy states in insulating layer on the leakage current and electric charge distribution. The electrical conduction can occur by thermally activatedhopping and tunneling between deep impurity states. When an electron moves from one localized state to another it will exchange energy with a phonons. The charge carrier's mobility has a thermally activated nature and its value is of the order of 1 cm2/Vs. Capacitor restoring voltage analysis reveals that in normal mode charge stored in insulating layer is proportional to applied voltage. Proportionality constant depends on insulating layer characteristics and on anodic oxidation paramet

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Nízkofrekvenční šum v submikronových MOSFET a HEMT strukturách</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EDS 08

ISBN

978-80-214-3717-3

ISSN

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e-ISSN

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Počet stran výsledku

7

Strana od-do

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Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Brno

Datum konání akce

10. 9. 2008

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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