RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81971" target="_blank" >RIV/00216305:26220/09:PU81971 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Popis výsledku v původním jazyce

Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the draincontact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it h

Název v anglickém jazyce

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Popis výsledku anglicky

Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the draincontact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it h

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastické jevy v polovodičových strukturách MIS a MIM</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

AIP conference proceedings

ISSN

0094-243X

e-ISSN

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Svazek periodika

1129

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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