Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU98589" target="_blank" >RIV/00216305:26220/12:PU98589 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position

Popis výsledku v původním jazyce

Experiments were carried out for the n-channel devices, processed in a 0.3 um spacer less Complementary Metal?Oxide?Semiconductor technology. Random-Telegraph-Signal measurements were performed for the constant gate voltage. It is supposed that electronconcentration in the channel decreases from the source to the drain contact. Lateral component of the electric field is inhomogeneous in the channel and it has a minimum value near the source and reaching the maximum value near the drain electrode. Draincurrent is given by two components ? diffusion and drift ones. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. The model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position is given. From the dependence of the capture time constant tc on the drain current could be calculated x-coordinate of the trap position.

Název v anglickém jazyce

Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position

Popis výsledku anglicky

Experiments were carried out for the n-channel devices, processed in a 0.3 um spacer less Complementary Metal?Oxide?Semiconductor technology. Random-Telegraph-Signal measurements were performed for the constant gate voltage. It is supposed that electronconcentration in the channel decreases from the source to the drain contact. Lateral component of the electric field is inhomogeneous in the channel and it has a minimum value near the source and reaching the maximum value near the drain electrode. Draincurrent is given by two components ? diffusion and drift ones. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. The model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position is given. From the dependence of the capture time constant tc on the drain current could be calculated x-coordinate of the trap position.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Japanese Journal of Applied Physics

ISSN

0021-4922

e-ISSN

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Svazek periodika

2012 (51)

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

5

Strana od-do

"024105-1"-"024105-5"

Kód UT WoS článku

000300627200042

EID výsledku v databázi Scopus

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