Near-field photoelectric measurement of Si solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU82379" target="_blank" >RIV/00216305:26220/09:PU82379 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Near-field photoelectric measurement of Si solar cells

Popis výsledku v původním jazyce

This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and itssize, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.

Název v anglickém jazyce

Near-field photoelectric measurement of Si solar cells

Popis výsledku anglicky

This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and itssize, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Lokální optická a elektrická charakterizace optoelektronických struktur s nanometrickým rozlišením</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

24th European Photovoltaic Solar Energy Conference Proceedings

ISBN

3-936338-25-6

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Neuveden

Místo vydání

Hamburg, Germany

Místo konání akce

Hamburg

Datum konání akce

20. 9. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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