Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87703" target="_blank" >RIV/00216305:26220/10:PU87703 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

Popis výsledku v původním jazyce

In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. Wecarried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.

Název v anglickém jazyce

Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

Popis výsledku anglicky

In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. Wecarried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluktuační procesy v PN přechodech solárních článků</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2010 9th International Conference on Environment end Electrical engineerong

ISBN

978-1-4244-5374-0

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Reprotechnika Wroclaw

Místo vydání

Wroclaw

Místo konání akce

Praha

Datum konání akce

16. 5. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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