Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU90363" target="_blank" >RIV/00216305:26220/10:PU90363 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability

Popis výsledku v původním jazyce

The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors atthe room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited bythe field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s.

Název v anglickém jazyce

Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability

Popis výsledku anglicky

The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors atthe room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited bythe field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastické jevy v polovodičových strukturách MIS a MIM</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

27th International Conference on Microelectronics MIEL 2010

ISBN

978-1-4244-7200-0

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

MIEL

Místo vydání

Niš

Místo konání akce

Niš

Datum konání akce

16. 5. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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