Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Popis výsledku v původním jazyce

Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltageTa and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changesof the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decre

Název v anglickém jazyce

Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Popis výsledku anglicky

Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltageTa and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changesof the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decre

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

CARTS EUROPE 2008

ISBN

0-7908-0121-3

ISSN

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e-ISSN

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Počet stran výsledku

10

Strana od-do

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Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Helsinky

Datum konání akce

20. 10. 2008

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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