Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU110316" target="_blank" >RIV/00216305:26220/13:PU110316 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions

Popis výsledku v původním jazyce

Degradation of leakage current (DCL) under steady-state bias conditions was investigated at temperature 400 K and rated voltage 35 V on samples of solid tantalum capacitors with manganese oxide cathode of three world producers. High temperature and highvoltage applications of these capacitors are considered to be limited by ions diffusion and field crystallization mechanisms [1 to 6]. Crystalline oxide starts the recrystallization at temperature above 400 K without electric field. In electric field therecrystallization of tantalum pent-oxide can start at temperature as low as 400 K. Tantalum capacitor is here considered as a Metal ? Insulator ? Semiconductor (MIS) structure. I-V characteristics in normal and reverse mode were measured for temperatures 300 and 400 K. Further, the variations of leakage current during the thermal annealing were measured with time in the presence and absence of the external electric field, and evaluated. From these experiments information was received co

Název v anglickém jazyce

Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions

Popis výsledku anglicky

Degradation of leakage current (DCL) under steady-state bias conditions was investigated at temperature 400 K and rated voltage 35 V on samples of solid tantalum capacitors with manganese oxide cathode of three world producers. High temperature and highvoltage applications of these capacitors are considered to be limited by ions diffusion and field crystallization mechanisms [1 to 6]. Crystalline oxide starts the recrystallization at temperature above 400 K without electric field. In electric field therecrystallization of tantalum pent-oxide can start at temperature as low as 400 K. Tantalum capacitor is here considered as a Metal ? Insulator ? Semiconductor (MIS) structure. I-V characteristics in normal and reverse mode were measured for temperatures 300 and 400 K. Further, the variations of leakage current during the thermal annealing were measured with time in the presence and absence of the external electric field, and evaluated. From these experiments information was received co

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centrum senzorických, informačních a komunikačních systémů (SIX)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

https://escies.org/webdocument/showArticle?id=984&groupid=6

ISBN

978-5-7526-0597-0

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

1-5

Název nakladatele

Neuveden

Místo vydání

Noordwijk, Nizozemí

Místo konání akce

Nordwijk

Datum konání akce

24. 9. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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