Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics

Popis výsledku v původním jazyce

The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the le

Název v anglickém jazyce

Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics

Popis výsledku anglicky

The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the le

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics

ISBN

978-1-4244-8555-0

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

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Název nakladatele

IEEE Explore Digital Library

Místo vydání

Berlin

Místo konání akce

Berlin

Datum konání akce

13. 9. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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