Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU95271" target="_blank" >RIV/00216305:26220/11:PU95271 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

Popis výsledku v původním jazyce

Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature rangefrom 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterize

Název v anglickém jazyce

Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

Popis výsledku anglicky

Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature rangefrom 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterize

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastické jevy v polovodičových strukturách MIS a MIM</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

CARTS EUROPE 2011 PROCEEDING

ISBN

0-7908-0155-8

ISSN

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e-ISSN

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Počet stran výsledku

9

Strana od-do

"3-33"-"3-41"

Název nakladatele

Electronic Components Industry Association ECIA

Místo vydání

Nice, France

Místo konání akce

Nice

Datum konání akce

10. 10. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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