Advanced Local Quality Assessment of Monocrystalline Silicon Solar Cell Efficiency

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU89948" target="_blank" >RIV/00216305:26220/11:PU89948 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Advanced Local Quality Assessment of Monocrystalline Silicon Solar Cell Efficiency

Popis výsledku v původním jazyce

Solar cells, or photovoltaic cells, are used to convert sunlight into electrical power. The defects or imperfections in silicon solar cells lower the light-current conversion and consequently also an efficiency of the device. These defects in the semiconductor structure are normally detected by electric measurements. The thermal dependency of breakdown voltage is positive and the defects can be revealed by surface inhomogenity. To ensure a higher quality of the solar cells, advanced local quality assessment is provided and experimental results of solar cell defect measurement in microscale region are presented. Using Near-field optical beam induced current and voltage method, both current and voltage in defect area were detected and individual defectswere localized with higher spatial resolution. This measurement also verifies that in reverse biased electroluminescence spots the quantum efficiency is lower and so these spots affect overall quality of the cell.

Název v anglickém jazyce

Advanced Local Quality Assessment of Monocrystalline Silicon Solar Cell Efficiency

Popis výsledku anglicky

Solar cells, or photovoltaic cells, are used to convert sunlight into electrical power. The defects or imperfections in silicon solar cells lower the light-current conversion and consequently also an efficiency of the device. These defects in the semiconductor structure are normally detected by electric measurements. The thermal dependency of breakdown voltage is positive and the defects can be revealed by surface inhomogenity. To ensure a higher quality of the solar cells, advanced local quality assessment is provided and experimental results of solar cell defect measurement in microscale region are presented. Using Near-field optical beam induced current and voltage method, both current and voltage in defect area were detected and individual defectswere localized with higher spatial resolution. This measurement also verifies that in reverse biased electroluminescence spots the quantum efficiency is lower and so these spots affect overall quality of the cell.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Lokální optická a elektrická charakterizace optoelektronických struktur s nanometrickým rozlišením</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Key Engineering Materials

ISSN

1662-9795

e-ISSN

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Svazek periodika

465

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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