MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92969" target="_blank" >RIV/00216305:26220/11:PU92969 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS

Popis výsledku v původním jazyce

The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process, especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurement is the effective carrier lifetime, dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. The main objective of this work is to propose a solution, which would meet a few key parameters. It has toexhibit an immediate start-up of passivation properties, long-time stability, the reproducibility of lifetime measurement and the perfect cleaning of the wafer surface must be possible. Another purpose of this work is to identify the par

Název v anglickém jazyce

MEASUREMENT OF CARRIER BULK-LIFETIME BY THE HELP OF NEW CHEMICAL PASSIVATION IN TECHNOLOGY OF SILICON SOLAR CELLS

Popis výsledku anglicky

The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process, especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurement is the effective carrier lifetime, dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. The main objective of this work is to propose a solution, which would meet a few key parameters. It has toexhibit an immediate start-up of passivation properties, long-time stability, the reproducibility of lifetime measurement and the perfect cleaning of the wafer surface must be possible. Another purpose of this work is to identify the par

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Souvislost lokální emise světla se stochastickými jevy v PN přechodu solárních článků při velmi nízkých teplotách.</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Electronic Devices and Systems IMAPS CS International Conference 2011

ISBN

978-80-214-4303-7

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

134-139

Název nakladatele

VUT Brno

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

22. 6. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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