Fast New Method for Temporary Chemical Passivation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103668" target="_blank" >RIV/00216305:26220/13:PU103668 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Fast New Method for Temporary Chemical Passivation

Popis výsledku v původním jazyce

The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurementis the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. sivation. This work deals with an examination of a different solution types for the chemicalpassivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up vel

Název v anglickém jazyce

Fast New Method for Temporary Chemical Passivation

Popis výsledku anglicky

The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetime the characterization method MW PCD (Microwave Photoconductance Decay) is used, where the result of measurementis the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. sivation. This work deals with an examination of a different solution types for the chemicalpassivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up vel

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Montanistica Slovaca

ISSN

1335-1788

e-ISSN

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Svazek periodika

17

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

5

Strana od-do

263-267

Kód UT WoS článku

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EID výsledku v databázi Scopus

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