Carrier Bulk-Lifetime Measurement during Solar Cell Production

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU94295" target="_blank" >RIV/00216305:26220/11:PU94295 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Carrier Bulk-Lifetime Measurement during Solar Cell Production

Popis výsledku v původním jazyce

The main material parameter of silicon is the minority carrier bulk lifetime and influences the effectiveness of photovoltaic cells. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the m

Název v anglickém jazyce

Carrier Bulk-Lifetime Measurement during Solar Cell Production

Popis výsledku anglicky

The main material parameter of silicon is the minority carrier bulk lifetime and influences the effectiveness of photovoltaic cells. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the m

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Souvislost lokální emise světla se stochastickými jevy v PN přechodu solárních článků při velmi nízkých teplotách.</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ElectroScope - http://www.electroscope.zcu.cz

ISSN

1802-4564

e-ISSN

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Svazek periodika

2011

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

4

Strana od-do

1-4

Kód UT WoS článku

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EID výsledku v databázi Scopus

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