Investigation of the photon emission from the p-n junction of silicon solar cells studied by electro-optical methods

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU95459" target="_blank" >RIV/00216305:26220/11:PU95459 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of the photon emission from the p-n junction of silicon solar cells studied by electro-optical methods

Popis výsledku v původním jazyce

We investigate localized defects in silicon solar cells. These imperfections represent a real problem because they can lead to long-term degradation and decreasing conversion efficiency of solar cells. Thus, this paper presents a systematic optical investigation of local defects and their correlation with rectangular microplasma fluctuations. A sensitive CCD camera has been used for mapping the surface photon emission from localized defects. The operation point of the samples has been set to reverse bias mode and varying electric fields were applied. It turns out that some solar cells exhibit imperfection in the bulk and also close to the cell edges. However, we confine our work here to bulk. Using a combination of optical investigations and electricalnoise measurement in the time and spectral domain, we reveal a direct correlation between noise and photon emission. The results for several defect spots are presented in detail.

Název v anglickém jazyce

Investigation of the photon emission from the p-n junction of silicon solar cells studied by electro-optical methods

Popis výsledku anglicky

We investigate localized defects in silicon solar cells. These imperfections represent a real problem because they can lead to long-term degradation and decreasing conversion efficiency of solar cells. Thus, this paper presents a systematic optical investigation of local defects and their correlation with rectangular microplasma fluctuations. A sensitive CCD camera has been used for mapping the surface photon emission from localized defects. The operation point of the samples has been set to reverse bias mode and varying electric fields were applied. It turns out that some solar cells exhibit imperfection in the bulk and also close to the cell edges. However, we confine our work here to bulk. Using a combination of optical investigations and electricalnoise measurement in the time and spectral domain, we reveal a direct correlation between noise and photon emission. The results for several defect spots are presented in detail.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluktuační procesy v PN přechodech solárních článků</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

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Svazek periodika

8036

Číslo periodika v rámci svazku

8306

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

"1I1"-"1I6"

Kód UT WoS článku

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EID výsledku v databázi Scopus

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