Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101133" target="_blank" >RIV/00216305:26220/12:PU101133 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

Popis výsledku v původním jazyce

This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I ? t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is for

Název v anglickém jazyce

Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

Popis výsledku anglicky

This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I ? t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is for

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/MEB091129" target="_blank" >MEB091129: Šumová diagnostika tlustovrstvových senzorů tlaku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings

ISBN

978-961-92933-2-4

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

145-150

Název nakladatele

MIDEM

Místo vydání

Slovinsko

Místo konání akce

Otočec Slovenia

Datum konání akce

19. 9. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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