MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101494" target="_blank" >RIV/00216305:26220/12:PU101494 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

Popis výsledku v původním jazyce

The complex permittivity of thin oxide film in commercial niobium oxide capacitor was measured in the temperature range 218 ? 373 K by using Janis cryostat system, with HP4284A impedance analyzer at frequencies from 20 Hz to 1 MHz. Dielectric relaxationwas observed in the range 218 ? 373 K with the activation energy 0.055 eV. The real part of complex permittivity increases with temperature and decreases with frequency, whereas the imaginary part of complex permittivity displays a broad maximum peak whose position shifts with temperature to a higher frequency region. The measured imaginary parts of complex permittivity of thin oxide film were studied by the graphical analysis of the obtained data as proposed by Havriliak and Negami (HN) equation; we found that HN equation can very well fit the observed dielectric loss as a function of frequency except for slight deviations of observed values from the fitting curve at low frequencies. This slight deviation may be due to dc conductivity.

Název v anglickém jazyce

MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

Popis výsledku anglicky

The complex permittivity of thin oxide film in commercial niobium oxide capacitor was measured in the temperature range 218 ? 373 K by using Janis cryostat system, with HP4284A impedance analyzer at frequencies from 20 Hz to 1 MHz. Dielectric relaxationwas observed in the range 218 ? 373 K with the activation energy 0.055 eV. The real part of complex permittivity increases with temperature and decreases with frequency, whereas the imaginary part of complex permittivity displays a broad maximum peak whose position shifts with temperature to a higher frequency region. The measured imaginary parts of complex permittivity of thin oxide film were studied by the graphical analysis of the obtained data as proposed by Havriliak and Negami (HN) equation; we found that HN equation can very well fit the observed dielectric loss as a function of frequency except for slight deviations of observed values from the fitting curve at low frequencies. This slight deviation may be due to dc conductivity.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centrum senzorických, informačních a komunikačních systémů (SIX)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

New Trends in Physics, Nové trendy ve fyzice, NTF 2012

ISBN

978-80-214-4594-9

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

27-30

Název nakladatele

Vysoké učení technické v Brně

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

11. 10. 2012

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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