Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors

Popis výsledku v původním jazyce

Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real partof the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.

Název v anglickém jazyce

Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors

Popis výsledku anglicky

Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real partof the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

9th ELEKTRO 2012 international conference

ISBN

978-1-4673-1178-6

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

484-488

Název nakladatele

FEKT VUT Brno

Místo vydání

Žilina, Slovak Republic

Místo konání akce

Rajecké Teplice

Datum konání akce

21. 5. 2012

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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