Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101609" target="_blank" >RIV/00216305:26220/12:PU101609 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0040609012002295#" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609012002295#</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Popis výsledku v původním jazyce

Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic times depending on the dielectric type. By selecting appropriate technological and electrolytic conditions, the functionality of the capacitors can be optimized to meet the needs of a specific range, from 1 kHz to about 300 MHz operating frequencies.

Název v anglickém jazyce

Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Popis výsledku anglicky

Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic times depending on the dielectric type. By selecting appropriate technological and electrolytic conditions, the functionality of the capacitors can be optimized to meet the needs of a specific range, from 1 kHz to about 300 MHz operating frequencies.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

R - Projekt Ramcoveho programu EK

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

-

Číslo periodika v rámci svazku

-

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

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EID výsledku v databázi Scopus

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