Luminescence radiation spectroscopy of silicon solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105357" target="_blank" >RIV/00216305:26220/13:PU105357 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2024290" target="_blank" >http://dx.doi.org/10.1117/12.2024290</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2024290" target="_blank" >10.1117/12.2024290</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Luminescence radiation spectroscopy of silicon solar cells

Popis výsledku v původním jazyce

This paper deals about results of new potential in to use one of characteristics luminescence radiation for detection defects of solar cells. So polarization spectroscopy of defect in solar cells may be used to fitting characterization of silicon solar cells. Radiation emitted by the solar cell has a wave character that can interact with the silicon structures or hypothetically thin reflectance layer of solar cells. In our research we can observed the linear partially polarization luminescence light onpoly-silicon crack defect. Spectral response of using CCD camera is approximately 300 to 1100 nm. Sinusoid dependence of luminescence intensity on the angle of linear polarization analyzer rotation shown this fact. The degree of polarization depends on the material, in this case the character of defect. Polarized light can be obtained in various ways. This fact opens up for potential next new questions in this widely course of study diagnostics defects silicon solar cells.

Název v anglickém jazyce

Luminescence radiation spectroscopy of silicon solar cells

Popis výsledku anglicky

This paper deals about results of new potential in to use one of characteristics luminescence radiation for detection defects of solar cells. So polarization spectroscopy of defect in solar cells may be used to fitting characterization of silicon solar cells. Radiation emitted by the solar cell has a wave character that can interact with the silicon structures or hypothetically thin reflectance layer of solar cells. In our research we can observed the linear partially polarization luminescence light onpoly-silicon crack defect. Spectral response of using CCD camera is approximately 300 to 1100 nm. Sinusoid dependence of luminescence intensity on the angle of linear polarization analyzer rotation shown this fact. The degree of polarization depends on the material, in this case the character of defect. Polarized light can be obtained in various ways. This fact opens up for potential next new questions in this widely course of study diagnostics defects silicon solar cells.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

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Svazek periodika

8825

Číslo periodika v rámci svazku

8825

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

882529-882535

Kód UT WoS článku

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EID výsledku v databázi Scopus

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