Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU112292" target="_blank" >RIV/00216305:26220/15:PU112292 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2070352" target="_blank" >http://dx.doi.org/10.1117/12.2070352</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2070352" target="_blank" >10.1117/12.2070352</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Popis výsledku v původním jazyce

The objective of the study is dependence of optical properties of solid solution of silicon carbide and aluminum nitride on structure. Even small differences in composition provide manipulation of band gap features in wide range. Data for this paper were collected by X-ray diffraction and by study of photoluminescence and absorption spectra. Evolution of optical properties as a result of composition changing was studied. X-ray study proves the presence of (SiC)1-x(AlN)x solid solution. Investigation of absorption spectra shows that optical band gap of the sample with composition of (SiC)0,88(AlN)0,12 is 3.1 eV and 4.24 eV for (SiC)0,36(AlN)0,64 solid solution. Photoluminescence demonstrates strongly dependence of spectrum on x concentration. The results are in mutual agrement and correspond to the therory. These data allows optimization of optical properties for certain optoelectronic application by control of the (SiC)1-x(AlN)x composition

Název v anglickém jazyce

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Popis výsledku anglicky

The objective of the study is dependence of optical properties of solid solution of silicon carbide and aluminum nitride on structure. Even small differences in composition provide manipulation of band gap features in wide range. Data for this paper were collected by X-ray diffraction and by study of photoluminescence and absorption spectra. Evolution of optical properties as a result of composition changing was studied. X-ray study proves the presence of (SiC)1-x(AlN)x solid solution. Investigation of absorption spectra shows that optical band gap of the sample with composition of (SiC)0,88(AlN)0,12 is 3.1 eV and 4.24 eV for (SiC)0,36(AlN)0,64 solid solution. Photoluminescence demonstrates strongly dependence of spectrum on x concentration. The results are in mutual agrement and correspond to the therory. These data allows optimization of optical properties for certain optoelectronic application by control of the (SiC)1-x(AlN)x composition

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

—

Svazek periodika

9450

Číslo periodika v rámci svazku

9450

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

„94501R-1“-„94501R-6“

Kód UT WoS článku

000349404500061

EID výsledku v databázi Scopus

2-s2.0-84923036749