Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU114923" target="_blank" >RIV/00216305:26220/15:PU114923 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.spmi.2015.08.007" target="_blank" >http://dx.doi.org/10.1016/j.spmi.2015.08.007</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.spmi.2015.08.007" target="_blank" >10.1016/j.spmi.2015.08.007</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

Popis výsledku v původním jazyce

The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (111) is the large difference (~ 20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.

Název v anglickém jazyce

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

Popis výsledku anglicky

The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (111) is the large difference (~ 20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

SUPERLATTICES AND MICROSTRUCTURES

ISSN

0749-6036

e-ISSN

1096-3677

Svazek periodika

2015

Číslo periodika v rámci svazku

85

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

395-402

Kód UT WoS článku

000362603100047

EID výsledku v databázi Scopus

2-s2.0-84940396944