Multifractal characterization of epitaxial silicon carbide on silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU124466" target="_blank" >RIV/00216305:26220/17:PU124466 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1515/msp-2017-0049" target="_blank" >http://dx.doi.org/10.1515/msp-2017-0049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/msp-2017-0049" target="_blank" >10.1515/msp-2017-0049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Multifractal characterization of epitaxial silicon carbide on silicon

Popis výsledku v původním jazyce

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. Thetopography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Název v anglickém jazyce

Multifractal characterization of epitaxial silicon carbide on silicon

Popis výsledku anglicky

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. Thetopography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MATERIALS SCIENCE-POLAND

ISSN

2083-1331

e-ISSN

2083-134X

Svazek periodika

neuveden

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000418872200013

EID výsledku v databázi Scopus

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