Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU116293" target="_blank" >RIV/00216305:26220/15:PU116293 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf" target="_blank" >http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Popis výsledku v původním jazyce

This paper deals with deposition of aluminum nitride layer on different underlayers namely silicon (100), amorphous thermal silicon dioxide, and titanium (001). The aluminum nitride layer was deposited using 3-grid radio frequency inductive coupled plasma (RFICP) Kaufman ion-beam source which provides slow deposition rate with low energy of plasma ions. This possibility leads to high homogeneity and very smooth surface. Titanium layer was deposited by argon plasma at low energy of 200 eV to attain the highly oriented c-axis layer. The aluminum nitride was sputtered on substrate which was heated to 350 °C. The nitrogen plasma only at energy of 500 eV was used. It was observed the aluminum nitride deposited on thermal silicon dioxide has the highest root mean square of roughness (RRMS) = 1.49 nm and the lowest intensity of X-ray diffraction in Bragg-Brentano focusing geometry (XRD–BB). The aluminum nitride deposited on silicon (100) shows higher intensity of XRD–BB and the lowest RRMS = 0.48 nm. Although the RRMS = 0.66 nm of aluminum nitride thin film deposited on titanium (001) underlayer was obtained, the highest intensity of XRD– BB was observed. Azimuthally averaged intensity of pole figures obtained using parallel beam setup represents the information about misorientation of individual crystallites. These analyses were performed for aluminum nitride layers deposited on titanium (001) film and silicon (100) wafer. Misorientation determined from full width at half maximum (FWHM) of the pole figures was of about 0.5° lower for aluminum nitride thin film deposited on titanium underlayer than one deposited directly on silicon substrate without silicon dioxide.

Název v anglickém jazyce

Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Popis výsledku anglicky

This paper deals with deposition of aluminum nitride layer on different underlayers namely silicon (100), amorphous thermal silicon dioxide, and titanium (001). The aluminum nitride layer was deposited using 3-grid radio frequency inductive coupled plasma (RFICP) Kaufman ion-beam source which provides slow deposition rate with low energy of plasma ions. This possibility leads to high homogeneity and very smooth surface. Titanium layer was deposited by argon plasma at low energy of 200 eV to attain the highly oriented c-axis layer. The aluminum nitride was sputtered on substrate which was heated to 350 °C. The nitrogen plasma only at energy of 500 eV was used. It was observed the aluminum nitride deposited on thermal silicon dioxide has the highest root mean square of roughness (RRMS) = 1.49 nm and the lowest intensity of X-ray diffraction in Bragg-Brentano focusing geometry (XRD–BB). The aluminum nitride deposited on silicon (100) shows higher intensity of XRD–BB and the lowest RRMS = 0.48 nm. Although the RRMS = 0.66 nm of aluminum nitride thin film deposited on titanium (001) underlayer was obtained, the highest intensity of XRD– BB was observed. Azimuthally averaged intensity of pole figures obtained using parallel beam setup represents the information about misorientation of individual crystallites. These analyses were performed for aluminum nitride layers deposited on titanium (001) film and silicon (100) wafer. Misorientation determined from full width at half maximum (FWHM) of the pole figures was of about 0.5° lower for aluminum nitride thin film deposited on titanium underlayer than one deposited directly on silicon substrate without silicon dioxide.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of 7 th International conference Nanocon 2015

ISBN

978-80-87294-59-8

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

89-93

Název nakladatele

Tanger

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

14. 10. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000374708800014