Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU124810" target="_blank" >RIV/00216305:26620/17:PU124810 - isvavai.cz</a>

Výsledek na webu

<a href="https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf" target="_blank" >https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Popis výsledku v původním jazyce

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of ≈ 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (ρ) and the thermal coefficient of resistivity (α) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of ≈ 273 °C. The corresponding lattice parameters a0 and c0 were (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. Electrical parameters of this sample as ρ and α were (9.2 ± 0.1)∙10-7 Ω∙m and (2.6 ± 0.2)∙10-3 K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low ρ and high α are essential. We found that ρ and α are dependent on each other. The ρ value was ≈ 2× higher than the bulk material value, which is an excellent result for a thin film with the thickness of ≈ 80 nm.

Název v anglickém jazyce

Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Popis výsledku anglicky

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of ≈ 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (ρ) and the thermal coefficient of resistivity (α) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of ≈ 273 °C. The corresponding lattice parameters a0 and c0 were (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. Electrical parameters of this sample as ρ and α were (9.2 ± 0.1)∙10-7 Ω∙m and (2.6 ± 0.2)∙10-3 K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low ρ and high α are essential. We found that ρ and α are dependent on each other. The ρ value was ≈ 2× higher than the bulk material value, which is an excellent result for a thin film with the thickness of ≈ 80 nm.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of 9 th International conference Nanocon 2017

ISBN

978-80-87294-59-8

ISSN

—

e-ISSN

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Počet stran výsledku

6

Strana od-do

117-122

Název nakladatele

Tanger

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

18. 10. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000452823300018