Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU124082" target="_blank" >RIV/00216305:26620/17:PU124082 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/17:00099462

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0040609017305333" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0040609017305333</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2017.07.039" target="_blank" >10.1016/j.tsf.2017.07.039</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Popis výsledku v původním jazyce

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Název v anglickém jazyce

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Popis výsledku anglicky

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

638

Číslo periodika v rámci svazku

NA

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

57-62

Kód UT WoS článku

000411775900008

EID výsledku v databázi Scopus

2-s2.0-85025133062