In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU121382" target="_blank" >RIV/00216305:26220/16:PU121382 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/document/7747503/" target="_blank" >http://ieeexplore.ieee.org/document/7747503/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2016.2630275" target="_blank" >10.1109/TNS.2016.2630275</a>

Jazyk výsledku

angličtina

Název v původním jazyce

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Popis výsledku v původním jazyce

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Název v anglickém jazyce

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Popis výsledku anglicky

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ISSN

0018-9499

e-ISSN

1558-1578

Svazek periodika

PP

Číslo periodika v rámci svazku

99

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

000396404500082

EID výsledku v databázi Scopus

2-s2.0-85015785439